APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 1 ? 7 out vbus s1 g1 0/vbus g2 s2 absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. symbol parameter max ratings unit v dss drain - source breakdown voltage 800 v t c = 25c 56 i d continuous drain current t c = 80c 43 i dm pulsed drain current 232 a v gs gate - source voltage 30 v r dson drain - source on resistance 75 m p d maximum power dissipation t c = 25c 568 w i ar avalanche current (repetitive and non repetitive) 24 a e ar repetitive avalanche energy 0.5 e as single pulse avalanche energy 670 mj v dss = 800v r dson = 75m max @ tj = 25c i d = 56a @ tc = 25c application motor control switched mode power supplies uninterruptible power supplies features - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf kelvin source for easy drive very low stray inductance - symmetrical design - m5 power connectors high level of integration benefits outstanding performance at high frequency operation direct mounting to heatsink (isolated package) low junction to case thermal resistance low profile phase leg series & sic parallel diodes super junction mosfet power module
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 2 ? 7 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 1000a 800 v v gs = 0v,v ds = 800v t j = 25c 100 i dss zero gate voltage drain current v gs = 0v,v ds = 800v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 28a 75 m v gs(th) gate threshold voltage v gs = v ds , i d = 4ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 200 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 9015 c oss output capacitance 4183 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 215 pf q g total gate charge 364 q gs gate ? source charge 48 q gd gate ? drain charge v gs = 10v v bus = 400v i d = 56a 184 nc t d(on) turn-on delay time 10 t r rise time 13 t d(off) turn-off delay time 83 t f fall time inductive switching @ 125c v gs = 15v v bus = 553v i d = 56a r g = 1.2 ? 35 ns e on turn-on switching energy 583 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 533v i d = 56a, r g = 1.2 ? 556 j e on turn-on switching energy 1020 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 533v i d = 56a, r g = 1.2 ? 684 j series diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle t c = 85c 60 a i f = 60a 1.1 1.15 i f = 120a 1.4 v f diode forward voltage i f = 60a t j = 125c 0.9 v t j = 25c 24 t rr reverse recovery time i f = 60a v r = 133v di/dt = 400a/s t j = 125c 48 ns t j = 25c 66 q rr reverse recovery charge i f = 60a v r = 133v di/dt = 400a/s t j = 125c 300 nc
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 3 ? 7 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit i f(av) maximum average forward current 50% duty cycle tc = 125c 30 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 30a t j = 175c 2.6 3.0 v q c total capacitive charge i f = 30a, v r = 600v di/dt =1600a/s 84 nc f = 1mhz, v r = 200v 270 q total capacitance f = 1mhz, v r = 400v 198 pf thermal and package characteristics symbol characteristic min typ max unit transistor 0.22 series diode 0.65 r thjc junction to case parallel diode 0.45 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 4 ? 7 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.00001 0.0001 0.001 0.01 0.1 1 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 50 100 150 200 012345678 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xrds(on)max 250s pulse test @ < 0.5 duty cycle r ds(on) vs drain current v gs =10v v gs =20v 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20406080100120 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 28a 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 5 ? 7 0.90 0.95 1.00 1.05 1.10 1.15 -50 0 50 100 150 t j , junction temperature (c) bv dss , drain to source breakdown volta g e ( normalized ) breakdown voltage vs temperature on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 28a threshold voltage vs temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 100ms 10ms 1ms 100s 0 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited by r dson single pulse t j =150c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =160v v ds =400v v ds =640v 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 gate charge (nc) gate charge vs gate to source voltage v gs , gate to source voltage (v) i d =56a t j =25c
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 6 ? 7 delay times vs current t d(on) t d(off) 0 20 40 60 80 100 20 30 40 50 60 70 80 90 i d , drain current (a) td(on) and td(off) (ns) v ds =533v r g =1.2 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 20 30 40 50 60 70 80 90 i d , drain current (a) t r and t f (ns) v ds =533v r g =1.2 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 2 20 30 40 50 60 70 80 90 i d , drain current (a) eon and eoff (mj) v ds =533v r g =1.2 ? t j =125c l=100h e on e off 0.5 1 1.5 2 2.5 3 3.5 02.557.510 gate resistance (ohms) switching energy (mj) switchin g ener gy vs gate resistance v ds =533v i d =56a t j =125c l=100h 0 50 100 150 200 250 300 350 400 10 15 20 25 30 35 40 45 50 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =533v d=50% r g =1.2 ? t j =125c t j =25c t j =150c 1 10 100 1000 0.2 0.6 1 1.4 1.8 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage
APTC80AM75SC APTC80AM75SC ? rev 1 may, 2004 apt website ? htt p :/ / www.advanced p ower.com 7 ? 7 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.00001 0.0001 0.001 0.01 0.1 1 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 50 60 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 300 600 900 1200 400 600 800 1000 1200 1400 1600 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 400 800 1200 1600 2000 2400 1 10 100 1000 v r reverse voltage c, capacitance (pf) ?coolmos? comprise a new family of transistors developed by infineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. apt reserves the right to change, without notice, the specifications and information contained herein apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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